Field effect transistor

Details Field effect transistor Field effect transistor

2011-08-23

2011-08-23

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S194000, C257S250000, C257S256000, C257S357000, C257S560000, C257SE29009, C257SE29312, C257SE21205, C257SE21624, C438S140000, C438S172000, C438S182000, C438S454000, C438S573000, C438S574000, C438S578000, C438S579000

Reexamination Certificate

active

08004022

ABSTRACT:
A field effect transistor includes a GaN epitaxial substrate, a gate electrode formed on an electron channel layer of the substrate, and source and drain electrodes arranged spaced apart by a prescribed distance on opposite sides of the gate electrode. The source and drain electrodes are in ohmic contact with the substrate. At an upper portion of the gate electrode, a field plate is formed protruding like a visor to the side of drain electrode. Between the electron channel layer of the epitaxial substrate and the field plate, a dielectric film is formed. The dielectric film is partially removed at a region immediately below the field plate, to be flush with a terminal end surface of the field plate. The dielectric film extends from a lower end of the removed portion to the drain electrode, to be overlapped on the drain electrode.

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