Field effect transistor

Details Field effect transistor Field effect transistor

2011-03-15

2011-03-15

Thai, Luan C (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S052000, C257S057000, C257SE29145, C257SE29273

Reexamination Certificate

active

07906780

ABSTRACT:
Provided is a field effect transistor, provided with a gate electrode15, a source electrode13, and a drain electrode14formed on a substrate, including a channel layer11formed of an oxide containing In, Zn, or Sn as the main component, and a gate insulating layer12provided between the channel layer11and the gate electrode15, in which the gate insulating layer12is formed of an amorphous oxide containing Ga as the main component.

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