Field-effect transistor

Details Field-effect transistor Field-effect transistor

2011-01-04

2011-01-04

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S059000, C257S072000, C257SE51001, C257SE51002, C257SE51006

Reexamination Certificate

active

07863600

ABSTRACT:
A field-effect transistor is provided. The field-effect transistor includes a gate electrode, a gate-insulating layer, source/drain electrodes, and an organic semiconductor layer constituting a channel region. The source/drain electrodes each include a conductive portion composed of a metal and an organic conductive material layer which at least partially covers the conductive portion and which is doped with a dopant. The channel region is composed of the organic semiconductor layer located between the source/drain electrodes. The channel region and each of the conductive portions is electrically connected through the organic conductive material layer.

REFERENCES:
patent: 6335539 (2002-01-01), Dimitrakopoulos et al.
patent: 7129003 (2006-10-01), Cagle
patent: 7230267 (2007-06-01), Nagayama et al.
patent: 7256064 (2007-08-01), Hanna et al.
patent: 2003/0080426 (2003-05-01), Klauk et al.
patent: 2003/0092232 (2003-05-01), Klauk et al.
patent: 2004/0108562 (2004-06-01), Nagayama et al.
patent: 2004/0161873 (2004-08-01), Dimitrakopoulos et al.
patent: 2006/0249301 (2006-11-01), Meth
patent: 2006/0273303 (2006-12-01), Wu et al.
patent: 2003229579 (2003-08-01), None
patent: 2004103905 (2004-04-01), None
patent: 2004-146430 (2004-05-01), None
Japanese Office Action issued on Aug. 10, 2010 for corresponding Japanese patent application 2004-228573.

Affiliated with

Also associated with

Rating

Field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2728924