Field effect transistor

Details Field effect transistor Field effect transistor

1997-09-03

1998-09-01

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 20, 257 24, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

058014055

ABSTRACT:
An active layer of a field effect transistor disposed on an InP substrate (101) comprises at least an InAs layer (105) and two InGaAs layers (104, 106). The InGaAs layer (104) is In.sub.x Ga.sub.1-x As (wherein 0.55<x<1) and the InGaAs layer (106) is In.sub.y Ga.sub.1-y As (wherein 0.55<y<1). The active layer comprises, for example, In.sub.0.53 Ga.sub.0.47 As layer (103)/In.sub.0.8 Ga.sub.0.2 As layer (104)/InAs layer (105)/In.sub.0.8 Ga.sub.0.2 As layer (106)/In.sub.0.53 Ga.sub.0.47 As layer (107). Electrons which have been leached out of the InAs layer (105) are confined into the InGaAs layers (104, 106), and about 90% of the active electrons are accumulated in the layers (104, 105, 106) to achieve an excellent electron transport performance, so that an excellent high frequency characteristic can be obtained exhibiting a high cut-off frequency and an improved transconductance.

REFERENCES:
patent: 4984242 (1991-01-01), Scifres et al.
patent: 5331410 (1994-07-01), Kuwata
patent: 5371387 (1994-12-01), Ando
patent: 5373168 (1994-12-01), Ando et al.
patent: 5436470 (1995-07-01), Nakajima
patent: 5449928 (1995-09-01), Matsugatani et al.
patent: 5453631 (1995-09-01), Onda et al.
"Improved InAlAs/InGaAs HEMT Characteristics by Inserting an InAs Layer into the InGaAs Channel," by T. Akazaki et al., IEEE Electron Device Letters, vol. 13, No. 6, Jun. 1992, pp. 325-327.

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