Field effect transistor

Details Field effect transistor Field effect transistor

2011-01-11

2011-01-11

Fahmy, Wael M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S056000, C257S059000, C257S062000, C257S072000, C257SE29083, C257SE29092, C257SE29101

Reexamination Certificate

active

07868326

ABSTRACT:
A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

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