Field-effect transistor

Details Field-effect transistor Field-effect transistor

1995-11-30

1999-08-31

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 20, 257 24, 257194, H01L 310328

Patent

active

059456930

ABSTRACT:
A field-effect transistor has a channel layer of InGaAs, and a pair of wide bandgap layers disposed one on each side of the channel layer, with respective heterojunctions formed with the channel layer. The channel layer has a thickness ranging from 50 to 150 angstroms, which is substantially the same as two-dimensional electron gas layers that are formed in the channel layer. The wide bandgap layers have the same composition, and the same concentration of an impurity.

REFERENCES:
patent: 5504353 (1996-04-01), Kuzuhara
patent: 5514883 (1996-05-01), Nakatsuka et al.
IEDM Technical Digest, Intern. Electroni Devices Meeting, Dec. 8, 1991, pp. 36.6.1-36.6.4.
IEEE 1995 Microwave & Millimeter-Wave Monolithic Circuits Symposium, "A W-band Single-Chip Transceiver for FMCW Radar" K. W. Chang et al., pp. 41-44, 1995.
IEEE 1993 Microwave & Millimeter-Wave Monolighic Circuits Symposium, "A Low Cost 77GHz Monolithic Transitter for Automotive Collission Vaoicance Systems," L. Raffaelli et al, pp. 63-66, 1993.

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