Field effect transistor

Details Field effect transistor Field effect transistor

1987-07-10

1989-01-17

Edlow, Martin H.

357 234, 357 237, 357 2, H01L 2712

Patent

active

047990872

ABSTRACT:
A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed between the channel layer and the gate electrode, the superlattice layer having a plurality of constituent thin layers perpendicular to a direction of electric current in the channel layer.

REFERENCES:
patent: 4642144 (1987-02-01), Tiedje
Drummond, App. Phys. Lett, 25 Aug. 1986, 49(8), p. 461.
Japanese Journal of Applied Physics, vol. 19, Nr. 5, May 1980, pp. L225-L227, A New Field-Effect Transistor with Selectively Doped GaAs
-Al.sub.x Ga.sub.1-x As Heterojunctions by T. Mimura et al.

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