Field effect transistor

Details Field effect transistor Field effect transistor

1997-12-24

1999-12-28

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

H01L 29772, H01L 29812

Patent

active

060085096

ABSTRACT:
A heterostructure insulated-gate field effect transistor comprises a channel layer, barrier layer and a contact layer. The barrier layer is made of a material having an electron affinity smaller than that of the channel layer and equal to that of the contact layer. Due to the single heterostructure, the series resistance between the channel layer and the source (drain) electrode can be decreased without employing complicated selective ion implanting or selective epitaxial growing method.

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patent: 5250822 (1993-10-01), Sonoda et al.
patent: 5331410 (1994-07-01), Kuwata
patent: 5404032 (1995-04-01), Sawada et al.
Liu W-C et al.: "Performance Enhancement in a Metal-Insulator-Semiconductor-Like Pseudomorphic Transistor by Utilizing an AN-Gaas
+-IN0.2GA0.8As Two-Layer Structure" Mar. 20, 1995, Applied Physics Letters, vol. 66, NR. 12, pp. 1524-1526.
Kim B et al: "Millimeter-Wave AlGaAs/InGaas/Gaas Quantum Well Power MISFET" Dec. 11, 1988, International Electron Devices Meeting, San Francisco, Dec. 11-14, 1988, pp. 168-171, Institute of Electrical and Electronics Engineers.

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