Field effect transistor

Details Field effect transistor Field effect transistor

1991-11-07

1993-04-27

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

257192, H01L 2980, H01L 29161

Patent

active

052065278

ABSTRACT:
There is disclosed a field effect transistor comprising a channel layer formed of GaInAs and provided with a planar dope layer doped with an impurity in the form of a two-dimensional thin plane a cap layer and a buffer layer formed respectively in contact with the upper and lower faces of the channel layer, the cap layer and buffer layer being formed of GaInAs whose In composition ratio is lower than that of the channel layer first and a second semiconductor layers formed respectively in contact with the cap layer and the buffer layer, first and second semiconductor layers being formed of GaInAs whose In composition ratio is lower than GaAs or the cap layer and the buffer layer.

REFERENCES:
patent: 4980731 (1990-12-01), Hida
patent: 5091759 (1992-02-01), Shih et al.
patent: 5105241 (1992-04-01), Ando

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