Field effect transistor

Details Field effect transistor Field effect transistor

1986-02-13

1989-05-16

James, Andrew J.

357 238, 357 28, H01L 2978

Patent

active

048314226

ABSTRACT:
A field effect transistor having a short channel length of 1 .mu.m or less is disclosed. The transistor includes a plurality of impurity regions provided in the channel region between the source and drain regions. The impurity region has the same conductivity type as the channel produced between the impurity regions and a higher impurity density than the carrier density of the channel so that the heat in the carriers is transferred laterally to the impurity regions.

REFERENCES:
patent: 3660697 (1972-05-01), Berglund et al.
patent: 3735156 (1973-05-01), Krambeck et al.
patent: 4622569 (1986-11-01), Lade et al.
patent: 4644386 (1987-02-01), Nishizawa et al.
Fichtner, W. et al., "Experimental Results on Sub-Micron-Size P Channel MOSFETs", IEEE Electron Device Letters, vol. EDL-3, Feb. 1982, pp. 34-36.

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