Field effect transistor

Details Field effect transistor Field effect transistor

1994-12-13

1997-03-04

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 310336

Patent

active

056082398

ABSTRACT:
The present invention relates to a field effect transistor with high speed and excellent high frequency characteristics. A hetero junction field effect transistor, comprising a first semiconductor layer that contains In, a second semiconductor layer that contains In whose composition ratio is smaller than that of the first semiconductor layer, and a third semiconductor layer whose electron affinity is smaller than that of the first semiconductor layer, wherein the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer are successively disposed in the order, and wherein the thickness of the second semiconductor layer is equal to or larger than the thickness of two monolayers thereof and less than 4 nm. A current of this field effect transistor flows in the first semiconductor layer 3 and the second semiconductor layer 4 of the transistor. When the thickness of the second semiconductor layer 4 is 4 nm or more, the ratio of electrons that exist in the first semiconductor layer 3 is 85% or less of the case that the thickness of the second semiconductor layer 4 is almost zero. Thus, when the thickness of the second semiconductor layer 4 is decreased to the thickness of two monolayers thereof, the ratio of electrons that exist in the first semiconductor layer 3 becomes nearly 100%. Consequently, the high frequency characteristics of the transistor are improved.

REFERENCES:
patent: 5285087 (1994-02-01), Narita et al.
patent: 5298453 (1994-03-01), Hill
"Study of the Consequence of Excess Indium in the Active Channel of InGaAs/InAIAs High Electron Mobility Transistors on Device Properties," Ng et al., Appl. Phys. Lett. 52 (9), Feb. 29, 1988, pp. 728-730.
"Characterization of Graded Interface In.sub.x Ga.sub.1-x As/In.sub.0.52 A1.sub.0.48 As (0.53<x<0.70) Structures Grown by Molecular-Beam Epitaxy," Peng et al., J. Appl. Phys. 62 (7), Oct. 1, 1987, pp. 2880-2884.
"Technical Report of IEICE ED92-102, CPM92-139," The Institute of Electronics, Information and Communication Engineers, Japan, 1992, pp. 43-48.
IEEE Transactions On Electron Devices, vol. 39, No. 10, Oct. 1992, New York, pp. 2206-2213.

Affiliated with

Also associated with

Rating

Field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2148016