Field effect transistor

Details Field effect transistor Field effect transistor

1997-07-09

1999-03-23

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257283, H01L 2980

Patent

active

058863737

ABSTRACT:
A method of fabricating a field effect transistor with a spike-gate structure including forming a semiconductor layer on a semi-insulating substrate, and forming a recess having a spike shape in which a portion of a gate electrode projects into the semiconductor layer, in the semiconductor layer. The formation of the recess includes forming a narrow damaged layer in the semiconductor layer by one of focused ion beamion implantation and ion implantation; and wet-etching the semiconductor layer utilizing accelerated etching of the damaged layer, thereby forming a recess having a spike groove. As described above, without performing the complicated processes as in the prior art fabricating method shown in FIGS. 12(a)-12(i), by performing one FIB implantation process, an FET with a spike-gate structure can be fabricated by using simpler and fewer processes.

REFERENCES:
Kohno et al., "Modeling And Suppression Of The Surface Trap Effect On Drain Current Frequency Dispersions In GaAs MESFETs", 1994 IEEE GaAs IC Symposium, pp. 263-266, Dec. 1994.
Tanaka et al., "1.5 V-Operation GaAs Spike-gate Power FET With 65% Power-added Efficiency", 1995 IEEE IEDM 95, pp. 181-184, Dec. 1995.
IEEE Transactions on Electron Devices, vol. 42, No. 2, pp. 209-214 by Gaquiere et al. Feb. 1995.

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