Field effect transistor

Details Field effect transistor Field effect transistor

1996-12-24

1999-02-09

Guay, John F.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257192, 257280, H01L 29812, H01L 2980

Patent

active

058698566

ABSTRACT:
Disclosed is a field effect transistor which has: an operating layer which is of a compound semiconductor; a first conductive layer which is formed as a channel layer; a second conductive layer which is formed below the first conductive layer and through which a current less than that flowing through the first conductive layer is flown; an ohmic electrode which is ohmic-junctioned with the second conductive layer; and a source electrode and a drain electrode which are junctioned with the first conductive layer; wherein the source electrode and the drain electrode are ohmic-junctioned with the ohmic electrode with a resistivity lower than the resistivity between the first conductive layer and the second conductive layer.

REFERENCES:
patent: 5293058 (1994-03-01), Tsividis
P. Canfield et al.; "A p-Well GaAs MESFET Technology for Mixed-Mode Applications"; IEEE Journal of Solid-State Circuits, vol. 25, No. 6, Dec. 1990, pp. 1544-1548.

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