Field effect transistor

Details Field effect transistor Field effect transistor

1986-03-03

1989-09-05

James, Andrew J.

357 15, 357 90, H01L 2980

Patent

active

048643726

ABSTRACT:
This disclosure depicts a novel semiconductor device and the method of making it. A novel field effect transistor (FET) has a channel region which is heavily doped under the gate and between the gate and the source of the FET. The channel region between the gate and the drain is lightly doped. The FET is formed on a heavily doped semiconductor substrate. The method of making the novel FET comprises providing a mask layer over a lightly doped channel region and forming openings in the mask layer such that a portion of the mask is located at the gate location and has a predetermined width and height.

REFERENCES:
patent: H368 (1987-11-01), Yoder
patent: 4425573 (1984-01-01), Ristow

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