Field effect transistor

Details Field effect transistor Field effect transistor

1997-02-27

2000-05-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257284, H01L 2980

Patent

active

060693754

ABSTRACT:
On a channel layer, there are disposed a gate electrode and a first contact layer of which a side surface is brought into contact with the gate electrode on the source side and of which a side surface is apart from the gate electrode on the drain side. Provided on the first contact layer is a second contact layer on which ohmic source and drain electrodes are arranged. A connection wiring is disposed on an upper end of the gate electrode. Specifically, there are provided a thin contact layer and a thick contact layer such that the thin contact layer is brought into contact with the gate electrode. Therefore, the problems of the contact resistance of the ohmic electrode and the gate parasitic capacitance are removed and both drawbacks can be improved at the same time.

REFERENCES:
patent: 5504353 (1996-04-01), Kuzuhara

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