Field effect transistor

Details Field effect transistor Field effect transistor

1979-05-21

1982-01-26

Wojciechowicz, Edward J.

357 15, 357 23, 357 36, 357 41, 357 55, 357 61, H01L 2980

Patent

active

043131263

ABSTRACT:
A field effect transistor is provided wherein a semiconductor body has a source region and a plurality of drain regions with a gate region common to the plurality of drain regions. A common gate electrode is formed over the common gate region to control the flow of carriers to each one of the plurality of drain regions. With such arrangement an efficient multi-drain field effect transistor is provided through the use of a common gate electrode formed on the semiconductor body.

REFERENCES:
patent: 3803461 (1974-04-01), Beneking
patent: 3829883 (1974-08-01), Bate
patent: 4141023 (1979-02-01), Yamada

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