Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1997-02-24
1998-09-22
Guay, John F.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257631, H01L 29778
Patent
active
058118438
ABSTRACT:
A field effect transistor includes a semi-insulating III-V compound semiconductor substrate; a channel layer disposed on the substrate; an n type electron supply layer disposed on the channel layer and comprising a mixed crystalline compound semiconductor layer including AlAs; an n type ohmic contact layer disposed on the electron supply layer; source and drain electrodes disposed on the ohmic contact layer; an opening in a region between the source and drain electrodes penetrating the ohmic contact layer; a gate electrode disposed in the opening and making a Schotty contact; and a surface protection film of a semiconductor material free of Al, In, and As, covering the opening except where the gate electrode is present. Fluorine is prevented from getting into the electron supply layer with no increase in transconductance or source resistance by providing a layer between the source and a channel, and between the gate and the channel.
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Yamamoto et al., "Donor Passivation in n-AlInAs Layers . . . ", Journal of Electronics Materials, vol. 25, No. 4, 1996, pp. 685-690.
Fujita et al., "Novel HEMT Structures Using A Strained InGaP . . . " Extented Abstracts of 5th Int'l Conf. on Indium Phosphide and Related Materials (1993) pp. 497-500.
Hayafuji et al., "Thermal stability of AlInAs/GaInAs/InP heterostructures", Applied Physics Letters, vol. 66, No. 7, pp. 863-865, Feb. 1995.
Hayafuji et al., "Fluorine Passivation Of AlInAs/InGaAs/InP System--Material Dependence --", Technical Report of IEICE, ED-95-108, Oct. 1995, pp. 35-40.
Hayafuji Norio
Yamamoto Yoshitsugu
Guay John F.
Mitsubishi Denki & Kabushiki Kaisha
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