Field-effect transistor

Details Field-effect transistor Field-effect transistor

1987-06-29

1992-04-21

James, Andrew J.

357 232, H01L 2928

Patent

active

051073080

ABSTRACT:
A film of a first .pi.-conjugated polymer is used as at least one of the source and the drain of a field-effect transistor, and a film of a second .pi.-conjugated polymer which differs from the first .pi.-conjugated polymer is used as a semiconductor layer in the field-effect transistor.

REFERENCES:
patent: 4663001 (1987-05-01), Lazzaroni et al.
patent: 4873556 (1989-10-01), Hyodo et al.
Koezuka et al., "Organic Heterojunctions . . . Junctions", J. Appl. Phys. 58(3), Aug. 1, 1985, pp. 1279-1284.
Chiang et al., "Polyacetylene . . . and Compensation", Appl. Phys. Lett. 33(1), Jul. 1, 1978, pp. 18-20.
F. Ebisawa et al., "Electricl Properties of Polyacetylene/Polysiloxane Interface", J. Appl. Phys. 54(6), Jun. 1983, pp. 3255-3259.
A. Tsumura et al., "Macromolecular Electronic Device: Field-Effect Transistor with a Polythiophene Thin Film", Appl. Phys. Lett. 49(18), Nov. 3, 1986, pp. 1210-1212.
A. Tsumura et al., "Chemically Prepared Poly(N-Methylpyrrole) Thin Film, Its Application to the Field Effect Transistor", Chemistry Letters, pp. 863-866, 1986.
H. Koezuka et al., "Field-Effect Transistor with Polythiophene Thin Film", Abstract of International Conference on Science & Technology of Synthetic Metals, Jun. 1-6, 1986, p. 391.

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