Field effect transistor

Details Field effect transistor Field effect transistor

1983-10-07

1984-07-10

Davie, James W.

Amplifiers

With semiconductor amplifying device

Including gain control means

330277, 357 22, H01L 2976

Patent

active

044595565

ABSTRACT:
A dual gate Schottky barrier gate GaAs FET with improved cross-modulation characteristics when used in a UHF gain controlling tuner, having a value of 40 mA or smaller of a drain to source saturation current, the improvement of the FET is that length of a second gate which is disposed between a first gate and a drain is 1.5 .mu.m or longer.

REFERENCES:
Nanbu et al., "A Dual-Gato MESFET for a High Performance UHF TV Tuner", Conference: International Electron Devices Meeting Technical Digest, Washington, DC, USA, (Dec. 8-10, 1980), pp. 126-129.
Turner et al., "Schottky-Barrier FET's . . . Next Low-Noise Designs", Microwaves, Apr. 1972, vol. 11, No. 4, pp. 44, 46-49.
D. L. Mo, "The Cascode JFET as a Means to Avoid Excess Gate Current", IEE Transactions on Electron Devices, Aug. 1971, pp. 603-604.

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