Field effect transistor

Details Field effect transistor Field effect transistor

1979-12-03

1982-08-10

Wojciechowicz, Edward J.

357 41, 357 46, 357 55, H01L 2972

Patent

active

043440800

ABSTRACT:
Field effect transistor having a semiconductor substrate of a first conduction type, a source and a drain of a conduction type opposite the first conduction type, a zone of the opposite conduction type disposed between the source and the drain and surrounded by a region of the first conduction type and doped more heavily than the substrate and a control electrode insulated from the surface of the semiconductor substrate and covering the zone disposed between the source and the drain over the entire width thereof includes a drift section for charge carriers forming part of the zone disposed between the source and the drain and located between the control section and the drain, the drift section containing dopant atoms increasing in number in direction from the control electrode toward the drain.

REFERENCES:
patent: 4129880 (1978-12-01), Vinal
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4247860 (1981-01-01), Tihanyi

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