Field effect transistor

Details Field effect transistor Field effect transistor

1978-01-27

1979-08-07

Wojciechowicz, Edward J.

357 23, 357 90, 357 91, H01L 2980

Patent

active

041639847

ABSTRACT:
A field effect transistor having a doping concentration profile selected to linearize the relationship between the transconductance of the transistor and the level of a gate voltage fed to the gate electrode of such transistor over the operating range of such voltage. A first doping concentration profile is "spike-shaped" so that the bottom of the depletion zone and hence the transconductance is substantially invariant with gate voltage level. A second doping concentration profile, N(x), varies substantially as 1/x.sup.3 (where x is the depth from the surface of the transistor) over the operating range of the bottom of the depletion zone.

REFERENCES:
patent: RE28500 (1972-04-01), Breese et al.
patent: 4000504 (1976-12-01), Berger

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