Field effect transistor

Details Field effect transistor Field effect transistor

1984-04-13

1985-12-24

Edlow, Martin H.

357 2314, 357 41, 357 20, H01L 2978

Patent

active

045610037

ABSTRACT:
Field effect transistor, including negatively and positively doped zones in the form of a substrate of a given first conductivity type having a surface, a first zone of a second conductivity type being opposite the first given conductivity type and embedded planar in the substrate, a second zone of the first conductivity type being embedded planar in the first zone, a first p-n junction disposed between the first and second zones, a second p-n junction disposed between the first zone and the substrate, both of the p-n junctions emerging to the surface of the substrate, at least one channel zone disposed between the p-n junctions, and a gate electrode at least covering the channel zone and being insulated from the surface of the substrate, at least the second p-n junction at least in the vicinity of the channel zone adjoining a given negatively doped zone at the surface of the substrate at an angle of at most 180.degree. to the given negatively doped zone.

REFERENCES:
patent: 3463977 (1969-08-01), Grove et al.
patent: 3538398 (1970-11-01), Whiting
patent: 3845495 (1974-10-01), Cauge
patent: 4015278 (1977-03-01), Fukuta
patent: 4072975 (1978-02-01), Ishitani
patent: 4145700 (1979-03-01), Jambotkar
patent: 4345265 (1982-08-01), Blanchard
patent: 4376286 (1983-03-01), Lidow
"Hexfet: A New High In Power MOS", Electronic Design, Jun. 7, 1979.
Yoshida et al., "A High Power MOSFET with a Vertical Drain Electrode and a Meshed Gate Structure", IEEE J. Solid-State Circuits, vol. 5C-11, No. 4 , pp. 472-477, Aug. 1976.
Grove, A. S., "Physics and Technology of Semiconductor Devices", John Wiley & Sons, Inc., (1967) pp. 197-198.

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