Field effect transistor

Details Field effect transistor Field effect transistor

1980-12-22

1982-02-09

Wojciechowicz, Edward J.

357 15, 357 36, 357 46, 357 55, 357 23, H01L 2976

Patent

active

043152724

ABSTRACT:
A field effect transistor is provided wherein a semiconductor body has a central source region and a plurality of drain regions disposed about the periphery of the central source region. A gate region, common to at least a portion of the plurality of drain regions, is also formed in the body. With such arrangement an efficient multi-drain field effect transistor is provided through the use of a central source electrode formed on the semiconductor body.

REFERENCES:
patent: 3803461 (1974-04-01), Beneking
patent: 3829883 (1974-08-01), Bate
patent: 4141023 (1979-02-01), Yamada

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