Field effect transistor

Details Field effect transistor Field effect transistor

1995-01-06

1996-05-07

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257192, 257241, H01L 310328

Patent

active

055148832

ABSTRACT:
A field effect transistor is disclosed. The field effect transistor includes: a semiconductor substrate having at least an upper face; a semiconductor layered structure, formed on the upper face of the semiconductor substrate, the semiconductor layered structure including a channel layer; a source electric formed on the semiconductor layered structure; a drain electrode formed on the semiconductor layered structure at a position apart from the source electrode in a first direction by a prescribed distance; and a gate electrode, formed on the semiconductor layered structure between the source electrode and the drain electrode. The channel layer includes: a first channel region positioned directly under the source electrode; a second channel region positioned directly under the drain electrode; a third channel region which is adjacent to the first channel region and which is not positioned directly under the gate electrode; a fourth channel region which is adjacent to the second channel region and which is not positioned directly under the gate electrode; and a plurality of stripe-like middle channel regions for connecting the third channel region to the fourth channel region.

REFERENCES:
patent: 5019877 (1991-05-01), Hosogi
Mok et al., "V-Groove Power Junction Field-Effect Transistor for VHF applications," Sep. 20, 1976, Electronic Letters vol. 12; No. 22, pp. 582-583.

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