Field effect transistor

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Details

357 15, H01L 2980, H01L 2948

Patent

active

044660081

ABSTRACT:
A field effect transistor having a source and drain region arranged vertically in a semi-conductor body with an insulating layer separating them, a rectifying metal/semiconductor contact on a side surface of the semiconductor body to form a gate electrode, and a thin conductive layer arranged on the side surface to bridge the insulating layer at least in the region beneath the gate electrode.

REFERENCES:
patent: 3569801 (1971-03-01), Giaever
patent: 3761785 (1973-09-01), Pruniaux
patent: 3823352 (1974-07-01), Pruniaux et al.
patent: 4015278 (1977-03-01), Fukuta et al.
patent: 4126881 (1978-11-01), Von Basse et al.
patent: 4163988 (1979-08-01), Yeh et al.

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