Field effect transistor

Details Field effect transistor Field effect transistor

1980-02-04

1981-11-03

Rosenberger, R. A.

357 68, H01L 2980

Patent

active

042988799

ABSTRACT:
In a field effect transistor having interdigital electrodes the gate bonding pad portion is situated in the space formed between a pair of adjacent divided portions of the active region of the field effect transistor.

REFERENCES:
patent: 3969745 (1976-07-01), Blocker
Fukuta et al., "GaAs Microwave Power FET", IEEE Transactions on Electron Devices, vol. Ed-23, No. 4, Apr. 1976, pp. 388-394.
Liechti, "Microwave Field-Effect Transistors-1976", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-24, No. 6, Jun. 1976, pp. 279-300.

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