Field-effect transistor

Details Field-effect transistor Field-effect transistor

1980-09-16

1987-11-03

Buczinski, Stephen C.

Metal treatment

Stock

Ferrous

357 15, 357 63, 357 64, 148DIG23, 148DIG40, 148DIG56, 148DIG84, H01L 2980, H01L 21265

Patent

active

H00003689

ABSTRACT:
A method of improving field-effect transistors, and the product thereof, wherein the resistivity of the upper layer of the source-gate channel region of a GaAs field-effect transistor (FET) may be selectively raised is disclosed. Impurity ions are implanted in the source-gate channel region followed by a much shallower implantation of boron in the same region. The boron ion concentration should exceed the N+ impurity ion concentration by a factor of 2 or more.

REFERENCES:
patent: 3804681 (1974-04-01), Drangeid et al.
patent: 3997908 (1976-12-01), Schloetterer et al.
patent: 4196439 (1980-04-01), Niehaus et al.
patent: 4244097 (1981-01-01), Cleary
Rao et al, "Ion Implantation in Semiconductors", (Plenum Press, 1976, pp. -88.
Das et al, IEEE Trans. on Electron Devices, vol. ED24, No. 6, Jun. 1977, pp. 757-761.
Kung et al, Electronics Letters, vol. 13, No. 7, 31 Mar. 1977, pp. 187-188.

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