Field effect transistor

Details Field effect transistor Field effect transistor

1987-06-08

1988-05-24

Edlow, Martin H.

357 4, 357 16, 357 58, H01L 2978, H01L 2712, H01L 29161, H01L 2912

Patent

active

047469617

ABSTRACT:
This invention relates to the structure of a field effect transistor, which is suitable for liquid crystal display of an active matrix scheme and there is disclosed a new structure for the field effect transistor, in which at least one of the source region and the drain region is of multi-layered structure, in which high impurity concentration portions and low impurity concentration portions are alternately superposed on each other.

REFERENCES:
patent: 4065781 (1977-12-01), Gutknecht
patent: 4087902 (1978-05-01), Feltner
patent: 4199773 (1980-04-01), Goodman et al.
Onga et al. "Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties," Japanese Journal of Applied Physics vol. 21 No. 10 Oct. 1982 pp. 1472-1478.

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