Field effect transistor

Details Field effect transistor Field effect transistor

1992-03-25

1993-10-05

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257192, 257280, 257284, H01L 29161, H01L 29205, H01L 29225

Patent

active

052508226

ABSTRACT:
A field effect transistor includes a GaAs substrate on which an undoped GaAs layer is disposed. A doped electron supply layer is disposed on the undoped GaAs layer and has a negligible deep dopant level. A channel layer disposed on the electron supply layer has a larger electron affinity than the electron supply layer. The electron supply layer and the channel layer form a heterojunction. A third semiconductor layer having the same conductivity type as the electron supply layer is disposed on the electron supply layer. Gate, drain, and source electrodes are disposed on the third semiconductor layer. The dopant concentration of the third layer is smaller than the dopant concentration of the electron supply layer.

REFERENCES:
patent: 4558337 (1985-12-01), Saunier
patent: 4689115 (1987-08-01), Ibbotson et al.
patent: 4827320 (1989-05-01), Morkoc et al.
patent: 4967242 (1990-10-01), Sonoda et al.
patent: 5028968 (1991-07-01), O'Loughlin et al.
patent: 5038187 (1991-08-01), Zhou
patent: 5043777 (1991-08-01), Sriram
patent: 5049951 (1991-09-01), Goronkin et al.
patent: 5140386 (1992-08-01), Huang et al.
Muller et al., Device Electronics for IC's, p. 130, 1986.
Moll et al, "Pulse-Doped AlGaAs/InGaAs Pseudomorphic MODFET's", IEEE Transactions on Electron Devices, vol. 35, No. 7, Jul. 1988, pp. 879-886.
Zipperian et al, "A GaAs/In.sub.0.25 Ga.sub.0.75 As/GaAs Modulation-Doped, Single, Strained Quantum-Well FET", International Symposium on Gallium Arsenide . . . , Sep. 1985, pp. 421-425.
Tserng et al, "Millimeter-Wave Power Transistors And Circuits", Microwave Journal, Apr. 1989, pp. 125-135.
Riaziat et al, "HEMT Millimetre Wave Monolithic Amplifier On InP", Electronics Letters, vol. 25, No. 20, Sep. 1989, pp. 1328-1329.
Nguyen et al, "Influence Of Quantum-Well Width On Device Performance of Al.sub.0.30 Ga.sub.0.70 As/In.sub.0.25 Ga.sub.0.75 As (On GaAs) MODFET's", IEEE Transactions on Electron Devices, vol. 36, No. 5, May 1989, pp. 833-838.
Yuen et al, "Application Of HEMT Devices To MMICs", Microwave Journal, Aug. 1988.
Frensley, "Power-Limiting Breakdown Effects In GaAs MESFET's", IEEE Transactions on Electron Devices, vol. ED-28, No. 8, Aug. 1981, pp. 962-970.
Rosenberg et al, "An In.sub.0.15 Ga.sub.0.85 As/GaAs Pseudomorphic Single Quantum Well HEMT", IEEE Electron Device Letters, vol. EDL-6, No. 10, Oct. 1985, pp. 491-493.
Fukui, "Channel Current Limitations In GaAs MESFETS", Solid State Electronics, vol. 22, 1978, pp. 507-515.

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