Field effect transistor

Details Field effect transistor Field effect transistor

1997-02-26

1998-05-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257190, 257191, H01L 310328

Patent

active

057510300

ABSTRACT:
On a GaAs substrate are provided a buffer layer comprising an Undope-GaAs layer, a first n-InGaAs layer having an In composition ratio of 0.2, a second n-InGaAs layer having an In composition ratio of 0.02, a contact layer comprising an N.sup.+ type GaAs layer, a gate electrode, a source electrode, and a drain electrode. The first n-InGaAs layer and the second n-InGaAs layer form active layers in which an operating current flows. The second n-InGaAs layer having excellent crystallinity is formed on the first n-InGaAs layer. Consequently, a field effect transistor which displays a super low distortion characteristic having IP2 of 67.2 dBm and IP3 of 35 dBm can be manufactured with good reproducibility.

REFERENCES:
patent: 5124762 (1992-06-01), Childs et al.
patent: 5404032 (1995-04-01), Sawada et al.
T. Nakatsuka et al. "A low-distortion and low-noise wide-band amplifier using GaAs/InGaAs HFET", Proc. of The Institute of Electronics, Information and Communication Engineers (IEICE), Spring Conference '93, 5-159, 1993 together with an English abridged translation.

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