Field effect transistor

Details Field effect transistor Field effect transistor

1990-10-04

1991-06-11

Hille, Rolf

357 4, 357 22, H01L 29267, H01L 29080

Patent

active

050236741

ABSTRACT:
A field effect transistor includes a semiconductor substrate, first and second semiconductor layers formed on the semiconductor substrate, and third semiconductor layers located between the first and second semiconductor layers. The third semiconductor layers have a forbidden band width narrower than those in the first and second semiconductor layers and form a quantum well. The third semiconductor layers include a doping layer such as planar-doping or high doping, and a channel is formed in the third semiconductor layers along the quantum well. The electrons supplied from the doped layer are confined by the quantum well and form a quasi-two-dimensional electron gas.

REFERENCES:
patent: 4575924 (1986-03-01), Reed et al.
patent: 4605945 (1986-08-01), Katayama et al.
patent: 4792832 (1988-12-01), Baba et al.
Microelectronic Engineering, vol. 2, Nos. 1/3, Oct. 1984, "Physics of Nanometer Structure Devices", by C. Hamaguchi et al., pp. 34-43; and Single Quantum Well Transistor with AlGaAs/GaAs/AlGaAs Heterostructures, pp. 40-42.
Applied Physics Letters, vol. 45, No. 8, Oct. 1984, "High Performance Inverted and Large Current Double Interface Modulation-Doped Field-Effect Transistors with the Bulk (AI,Ga)As Replaced by Superlattice at the Inverted Interface", by D. Arnold et al., pp. 902-904.
IEEE Transactions on Electron Devices, vol. ED-28, No. 5, May 1981, "Characteristics of Planar Doped FET Structures", K. Board et al., pp. 505.510.
S. Judaprawira et al., "Mod-doped MBE GaAs
-Al.sub.x Ga.sub.1-x As MESFETs," IEEE Electr. Dev. Lett., vol. EDL-2, #1, Jan. 1981, pp. 14, 15.

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