Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-01-09
1995-07-25
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 27, 257194, H01L 29161, H01L 29205
Patent
active
054364701
ABSTRACT:
The invention provides a FET by forming a channel layer in layer including "n" type impurity at high concentration, which is sandwiched by a first semiconductor layer and a second semiconductor layer lightly doped with impurity. Therefore even when electrons in the channel layer obtain high energy, the electrons in this arrangement rush out essentially to the second semiconductor layer excelling in electron carrying characteristic, thus a travelling speed of the electrons in the channel layer is not lowered. Furthermore the channel layer being formed in layer and allowed to include impurity at high concentration, the current drive capability can be improved.
REFERENCES:
patent: 4833508 (1989-05-01), Ishikawa et al.
patent: 5091759 (1992-02-01), Shih et al.
"Parametric Analysis of GaInAs Devices For MM-Wave Applications," A. R. Jha, International Journal of Infrared and Millimeter Waves, vol. 10, No. 10, Oct. 1989, New York US pp. 1181-1191.
"A 10-Gbit/s Laser Driver IC With i-AlGaAs
-GaAs Doped-Channel Hetero-MISFETs (DMTs)," Suzuki et al., Proceedings 11th GAAS IC Symposium, IEEE, San Diego, Calif., US, 22-25 Oct. 1989 pp. 129-132.
"AlGaAs/In GaAs/GaAs Quantum-Well Power MISFET at Millimeter-Wave Frequencies," Kim et al., IEEE Electron Device Letters, vol. 9, No. 11, Nov. 1988, New York US pp. 610-612.
Jackson Jerome
Monin Don
Sumitomo Electric Industries Ltd.
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