Field effect transistor

Details Field effect transistor Field effect transistor

1994-06-01

1995-09-05

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257280, H01L 2702

Patent

active

054480868

ABSTRACT:
A field effect transistor comprises a semiconductor substrate, a first layer made of a semiconductor having an electron affinity and the first layer being formed on the semiconductor substrate, a second layer made of material having electron affinity smaller than that of the first layer formed on the first layer, a length of the second layer being longer than that of the first layer, source and drain regions formed on the semiconductor substrate, the source and drain regions being separated through a lamination of the first and second layer, a gate electrode formed on the second layer, a gate length of the gate electrode being shorter than that of the second layer and being shorter than that of the first layer and the gate electrode being separated from the source and drains region through the second layer.

REFERENCES:
By P. Solomon et al., "Low Resistance Ohmic Contacts to two-dimensional electron-gas structures by selective MOVPE", IEEE, 1989, pp. 405-408.

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