Field effect transistor

Details Field effect transistor Field effect transistor

1986-03-03

1987-10-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG82, 437 41, H01L 2142

Patent

active

046988998

ABSTRACT:
This disclosure depicts a novel semiconductor device and the method of making it. A novel field effect transistor (FET) has a channel region which is heavily doped under the gate and between the gate and the source of the FET. The channel region between the gate and the drain is lightly doped. The FET is formed on a heavily doped semiconductor substrate. The method of making the novel FET comprises providing a mask layer over a lightly doped channel region and forming openings in the mask layer such that a portion of the mask is located at the gate location and has a predetermined width and height. Ion implanting is performed at a predetermined angle such that a first portion of the channel adjacent the source is heavily doped and a second portion of the channel adjacent the drain is not exposed due to the height of the mask at the gate.

REFERENCES:
patent: 4208780 (1980-06-01), Richman
patent: 4232439 (1980-11-01), Shibata
patent: 4503601 (1985-03-01), Chiao
patent: 4509991 (1985-04-01), Taur
patent: 4517732 (1985-05-01), Oshikawa

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