Field effect transistor

Details Field effect transistor Field effect transistor

2009-03-26

2011-12-06

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29246

Reexamination Certificate

active

08072002

ABSTRACT:
A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN; an electron supplying layer formed on the electron running layer and formed of AlxGa1-xN (0.01≦x≦0.4), the electron supplying layer having a band gap energy different from that of the electron running layer and being separated with a recess region having a depth reaching the electron running layer; a source electrode and a drain electrode formed on the electron supplying layer with the recess region in between; a gate insulating film layer formed on the electron supplying layer for covering a surface of the electron running layer in the recess region; and a gate electrode formed on the gate insulating film layer in the recess region. The electron supplying layer has a layer thickness between 5.5 nm and 40 nm.

REFERENCES:
patent: 6552373 (2003-04-01), Ando et al.
patent: 7038253 (2006-05-01), Yoshida et al.
patent: 2005-159117 (2005-06-01), None
patent: WO-03-071607 (2003-08-01), None
M. Kuraguchi et al., “Normally-off GaN-MISFET with well-controlled threshold voltage”, International Workshop on Nitride Semiconductors 2006 (IWN 2006), Oct. 22-27, 2006, Kyoto, Japan, WeED1-4.
Huang W, Khan T, Chow T P: Enhancement-Mode n-Channel GaN MOFETs on p and n-GaN/Sapphire substrates. In: 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2006 (Italy), 10-1.

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