Field-effect transistor

Details Field-effect transistor Field-effect transistor

2006-11-01

2010-12-14

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S052000, C257S057000, C257S213000, C257SE29296, C257SE29080

Reexamination Certificate

active

07851792

ABSTRACT:
Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.

REFERENCES:
patent: 6123824 (2000-09-01), Sano et al.
patent: 6172296 (2001-01-01), Iwasaki et al.
patent: 6303945 (2001-10-01), Saito et al.
patent: 6344608 (2002-02-01), Kariya et al.
patent: 6399873 (2002-06-01), Sano et al.
patent: 6472248 (2002-10-01), Shiozaki et al.
patent: 6488995 (2002-12-01), Nishimoto et al.
patent: 6613603 (2003-09-01), Sano
patent: 6635899 (2003-10-01), Saito et al.
patent: 6653165 (2003-11-01), Kondo et al.
patent: 6706336 (2004-03-01), Kondo et al.
patent: 6794275 (2004-09-01), Kondo et al.
patent: 6812499 (2004-11-01), Kondo et al.
patent: 6835888 (2004-12-01), Sano et al.
patent: 6855621 (2005-02-01), Kondo et al.
patent: 6858308 (2005-02-01), Kondo et al.
patent: 7001460 (2006-02-01), Saito et al.
patent: 7064263 (2006-06-01), Sano et al.
patent: 7067844 (2006-06-01), Yamazaki
patent: 7339187 (2008-03-01), Wager, III et al.
patent: 2001/0014535 (2001-08-01), Yamazaki et al.
patent: 2004/0221887 (2004-11-01), Kondo et al.
patent: 2005/0017244 (2005-01-01), Hoffman et al.
patent: 2006/0108636 (2006-05-01), Sano et al.
patent: 2006/0244107 (2006-11-01), Sugihara et al.
patent: 2007/0090365 (2007-04-01), Hayashi et al.
patent: 2007/0194379 (2007-08-01), Hosono et al.
patent: 0 535 979 (1993-04-01), None
patent: 1 551 059 (2005-07-01), None
patent: 61-87371 (1986-05-01), None
patent: 5-95002 (1993-04-01), None
patent: 2005-33172 (2005-02-01), None
patent: 2005088726 (2005-09-01), None
patent: WO 2005088726 (2005-09-01), None
patent: 2006051993 (2006-05-01), None
H. Q. Chiang, et al., “High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer”, Applied Physics Letters, vol. 86, 2005, pp. 013503-1-013503-3.
R. Martins, et al., “Transport in high mobility amorphous wide band gap indium zinc oxide films”, Phys. Stat. Sol. (a), vol. 202, No. 9, 2005, pp. R95-R97.
PCT International Search Report and Written Opinion of the International Searching Authority, dated Jan. 24, 2007 in PCT/JP2006/322327.
PCT International Preliminary Report on Patentability, dated May 14, 2008 in PCT JP2006/322327.
Official Action dated Jul. 22, 2009 in Russian Application No. 2008122971/28(027634).

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