Field effect transistor

Details Field effect transistor Field effect transistor

2006-03-22

2008-12-02

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S011000, C257S103000, C257S192000, C257SE21125, C257SE21129, C438S166000, C438S172000, C438S191000, C438S932000

Reexamination Certificate

active

07459718

ABSTRACT:
A FET includes a nitride semiconductor in which leak current is reduced and breakdown voltage is improved. The FET is formed from a substrate, a buffer layer made of a nitride semiconductor, a first semiconductor layer made of a nitride semiconductor, and a second semiconductor layer made of a nitride semiconductor, wherein at least the buffer layer and the first semiconductor layer include a p-type dopant. The concentration of the p-type dopant is higher in the buffer layer than that in the first semiconductor layer, and the concentration of the p-type dopant is higher in the first semiconductor layer than that in the second semiconductor layer.

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