Field effect transistor

Details Field effect transistor Field effect transistor

2006-07-14

2008-11-25

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S195000, C257S192000, C257S280000

Reexamination Certificate

active

07456444

ABSTRACT:
A field effect transistor according to an embodiment of the invention includes: a semiconductor substrate; a channel layer of a first conductivity type formed on the semiconductor substrate; and a semiconductor layer of a second conductivity type that is buried in a recess structure formed in a semiconductor layer on the channel layer and connected with a gate electrode, in which the recess structure is formed using a recess stopper layer containing In, a semiconductor layer that contacts the bottom of the semiconductor layer of the second conductivity type does not contain In, and the uppermost semiconductor layer among semiconductor layers that contact a side surface of the semiconductor layer of the second conductivity type does not contain In.

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patent: 2001/0019131 (2001-09-01), Kato et al.
patent: 2004/0104404 (2004-06-01), Bito
patent: 2001-250939 (2001-09-01), None

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