Field-effect transistor

Details Field-effect transistor Field-effect transistor

2006-09-19

2008-10-07

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257S195000, C257S610000, C257S611000, C257S612000, C257S655000, C257S657000, C257SE29246, C257SE29247, C257SE29248, C257SE29249, C257SE29250, C257SE29251, C257SE29252, C257SE21403

Reexamination Certificate

active

07432538

ABSTRACT:
A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. The channel is formed near the interface between the channel layer and the carrier supply layer or depleted, the carrier supply layer has a band gap energy greater than that of the channel layer, and x in the formula AlxGa1-xN decreases monotonically with an increase in the distance from the interface. The channel layer may be crystalline of gallium nitride. The channel layer may be undoped. X of the formula AlxGa1-xN of the carrier supply layer is greater than or equal to 0.15 and less than or equal to 0.40 at the interface.

REFERENCES:
patent: 5296395 (1994-03-01), Khan et al.
patent: 2004/0195562 (2004-10-01), Munns
patent: 2005/0077541 (2005-04-01), Shen et al.
patent: 2005/0173728 (2005-08-01), Saxler
patent: 2006/0255364 (2006-11-01), Saxler et al.
patent: 1599960 (2005-03-01), None
patent: 2000-277536 (2000-10-01), None
patent: 2005-183551 (2005-07-01), None
patent: WO/2003/049193 (2003-06-01), None
Chinese Office Action dated May 9, 2008 with English translation.

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