Field effect transistor

Details Field effect transistor Field effect transistor

2008-01-22

2008-01-22

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S487000, C257SE29242

Reexamination Certificate

active

10544017

ABSTRACT:
On an SiC single crystal substrate, an electric field relaxation layer and a p− type buffer layer are formed. The electric field relaxation layer is formed between the p− type buffer layer and the SiC single crystal substrate to contact SiC single crystal substrate. On the p− type buffer layer, an n type semiconductor layer is formed. On the n type semiconductor layer, a p type semiconductor layer is formed. In the p type semiconductor layer, an n+ type source region layer and an n+ type drain region layer are formed separated by a prescribed distance from each other. At a part of the region of p type semiconductor layer between the n+ type source region layer and the n+ type drain region layer, a p+ type gate region layer is formed.

REFERENCES:
patent: 7023033 (2006-04-01), Harada et al.
patent: 2003/0168704 (2003-09-01), Harada et al.
patent: 2004/0164354 (2004-08-01), Mergens et al.
patent: 64-031471 (1989-02-01), None
patent: 09-074106 (1997-03-01), None
patent: 2000-323499 (2000-11-01), None
patent: 2003-068762 (2003-03-01), None
patent: WO 01/86727 (2001-11-01), None
S. T. Allen et al., “Frequency and power performance of microwave SiE FET's” Inst. Phys. Conf. Ser., No. 142, Chapter 4, IOP Publishing Ltd, 1995 pp. 761-764.

Affiliated with

Also associated with

Rating

Field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3956117