Field effect transistor

Details Field effect transistor Field effect transistor

2007-02-06

2007-02-06

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S024000

Reexamination Certificate

active

10508057

ABSTRACT:
In a field effect transistor having a quantum well is provided by a primary conduction channel, at least one secondary conduction channel immediately adjacent and in contact with the primary channel has an effect bandgap greater than the effective bandgap of the primary channel, and the modulus of the difference between the impact ionisation threshold IIT of the primary channel and the effective conduction band offset (the height of the step) between the primary and secondary channels being no more than 0.5 Eg (effective), or (alternatively) no more than 0.4 eV. Higher energy carriers which might otherwise cause impact ionization leading to runaway are thus diverted into the secondary channel allowing the device to run faster at increased voltages and/or to exhibit much greater resistance to runaway. The primary channel is prefereably of low bandgap material, for example InSb, InAs, InAs1-y, In1-xGaxAs.

REFERENCES:
patent: 4710788 (1987-12-01), Dambkes et al.
patent: 5023674 (1991-06-01), Hikosaka et al.
patent: 5286662 (1994-02-01), Kuwata
patent: 5331185 (1994-07-01), Kuwata
patent: 5334865 (1994-08-01), Fathimulla et al.
patent: 5856217 (1999-01-01), Nguyen et al.
patent: 6100548 (2000-08-01), Nguyen et al.
patent: 6555850 (2003-04-01), Sakamoto et al.
patent: 2002/0030202 (2002-03-01), Liu et al.
patent: 0 718 890 (1996-06-01), None
patent: 0 803 912 (1997-10-01), None
patent: 1 030 371 (2000-08-01), None
patent: 2 362 506 (2001-11-01), None
patent: 9 139493 (1997-05-01), None
patent: 9 283 745 (1997-10-01), None
Enoki, et al. “Design and Characteristics of InGa/As/InP Composite-Channel HFET's”, IEEE Transactions on Electron Devices,pp. 1413-1418 (1995).
Akazaki, et al. “Improved InAlAs/InGaAx HEMT Characteristics by Inserting an InAs Layer into the InGaAs Channel”, IEEE Electron Device Letters, pp. 325-327 (1992).
Akazaki, et al. “Improving the Characteristics of an InAlAs/InGaAs Inverted HEMT by Inserting an InAs Layer into the InGaAs Channel”, Solid State Electronics, p. 997-1000, (1995).
Karlsson, et al “Metamorphic HFET's with composite In0.8Ga0.2As/InAs/In0.8Ga0.2As Channels on GaAs Substrate”, Proceedings of the IEEE, pp. 483-486 (1997).
Uppal, et al. “Transport Properties of Heterostructures Based on GASB, INAS and INSB on GAAS Substrates”, Journal of Crystal Growth, pp. 623-627 (1991).

Affiliated with

Also associated with

Rating

Field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3883255