Field-effect transistor

Details Field-effect transistor Field-effect transistor

2007-08-14

2007-08-14

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S200000, C257S201000, C257SE29091, C257SE29255, C257SE29264

Reexamination Certificate

active

10541583

ABSTRACT:
An electric-field control electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayered film including a SiN film (21) and a SiO2film (22) is formed below the electric-field control electrode (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered with the SiN film (21).

REFERENCES:
patent: 5111256 (1992-05-01), Ohata et al.
patent: 6933544 (2005-08-01), Saito et al.
patent: 7173307 (2007-02-01), Hayashi et al.
patent: 2001/0015446 (2001-08-01), Inoue et al.
patent: 11-176839 (1999-07-01), None
patent: 2000-003919 (2000-01-01), None
patent: 2000-286428 (2000-10-01), None
patent: 2001-189324 (2001-07-01), None
patent: 2002-222860 (2002-08-01), None
patent: 2002-359256 (2002-12-01), None
U. K. Mishra et al., “AlGaN/GaN HEMTs-An Overview of Device Operation and Applications”, Proceedings of the IEEE, vol. 90, No. 6, Jun. 2002.
J. Li et al., “High Breakdown voltage GaN HFET with field plate”, Electronics Letters, 1stFeb. 2001, vol. 37, No. 3.
Y. Ando et al., “A 110-W AlGaN/GaN Heterojunction FET on Thinned Sapphire Substrate”.

Affiliated with

Also associated with

Rating

Field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3827595