Field effect transistor

Details Field effect transistor Field effect transistor

1997-03-26

1999-02-23

Guay, John F.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257192, H01L 29778, H01L 29772

Patent

active

058747532

ABSTRACT:
In a field effect transistor including active layers having a heterojunction structure with at least two different semiconductor materials, a layer for supplying electrons is disposed opposite a drain electrode, in contact with a region of the active layers including a dopant impurity producing n type conductivity. Therefore, degradation of the electrical characteristics caused by trapping of electrons in a drain ohmic contact layer due to fluorine diffusing into the semiconductor layers is suppressed by supplying electrons from the layer opposite the drain electrode, thereby improving reliability of the field effect transistor including the heterojunction structure.

REFERENCES:
patent: 5351128 (1994-09-01), Gotto et al.
patent: 5677553 (1997-10-01), Yamamoto et al.
patent: 5682045 (1997-10-01), Hayafuji et al.
Hayafuji et al., "Thermal Stability Of AlInAs/GaInAs/InP Heterostructures", Applied Physics Letters, vol. 66, No. 7, 1995, pp. 863-865.
Fujihara et al., "Thermally Stable InAlAs/InGaAs Heterojunction FET With AIAs/InAs Superlattice Insertion Layer", Electronics Letters, pp. 1039-1041.
Yamamoto et al., "Donor Passivation In n-AlInAS Layers By AT Fluorine", Journal of Electronic Materials, vol. 25, No. 4, 1996, 685-690.

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