Field effect transistor

Details Field effect transistor Field effect transistor

1990-03-15

1991-05-28

James, Andrew J.

357 15, 357 65, 357 71, H01L 2980

Patent

active

050198777

ABSTRACT:
A field effect transistor for microwave and millimeter wave frequencies includes a plurality of feeding points on a gate finger extending on a substrate, an airbridge wiring structure which connects adjacent feeding points with each other, and a gate pad beyond the source and drain electrodes connected with the gate finger through the airbridge. The relatively wide gate connection reduces gate resistance. The gate connection does not cross the source and drain electrodes, reducing capacitance. The reduced resistance and capacitance significantly improve the high frequency noise figure.

REFERENCES:
patent: 4794093 (1988-12-01), Tong et al.
patent: 4871687 (1989-10-01), Donzelli
patent: 4924289 (1990-05-01), Matsuoka
Itoh et al, "Fabrication of Super . . . Characteristics", Technical Research Report, vol. 88, No. 39, pp. 39-44.
Bastida et al, "Airbridge Gate . . . Circuits", IEEE Trans. on Electron Devices, vol. ED-32, No. 12, 1985, pp. 2754-2759.

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