Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1996-09-18
1998-07-28
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257279, 257283, 257284, H01L 2980, H01L 31112
Patent
active
057866104
ABSTRACT:
A field effect transistor includes an active layer having a surface; a source electrode and a drain electrode disposed on the surface of the active layer; a first gate electrode disposed on the surface of the active layer between the source electrode and the drain electrode, having a T-shaped cross section, and a lower layer and an upper layer, the lower layer contacting the active layer, and the upper layer being disposed on the lower layer and having a lower resistivity than the lower layer, and being longer than the lower layer in the direction parallel to the gate length; and a second gate electrode disposed on the surface of the active layer between the first gate electrode and the drain electrode, having a rectangular cross section and a single layer. The gate resistance of the first gate electrode is reduced, whereby efficiency is improved and noise is reduced. Further, since the second gate electrode has a single-layer structure, the size of the FET is reduced, so the distance between the first gate electrode and the drain electrode is reduced, resulting in a reduction in the parasitic drain resistance.
Fahmy Wael
Mitsubishi Denki & Kabushiki Kaisha
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