Field effect thin film transistor having a semiconductor layer f

Details Field effect thin film transistor having a semiconductor layer f Field effect thin film transistor having a semiconductor layer f

1988-03-22

1991-02-12

James, Andrew J.

Fishing, trapping, and vermin destroying

357 2, 437 84, 437 87, H01L 2701, H01L 2713, H01L 2978, H01L 4500

Patent

active

049928392

ABSTRACT:
An improved field effect thin film transistor characterized in that the semiconductor layer being formed from a polycrystal silicon film: said layer containing at least hydrogen atom and fluorine atom except silicon atom layer: and the concentration of said hydrogen atom or said fluorine atom being distributed in the thickness direction in the state that it being relatively thick in a layer region in the side of the substrate and relatively thin in a layer resion in the opposite side. A process for preparing the above field effect thin film transistor, characterized in that the semiconductor layer is formed by:

REFERENCES:
patent: 4217347 (1980-08-01), Ovshinsky et al.
patent: 4441973 (1984-04-01), Noguchi
Kamins et al., "Hydrogenation of Transistors Fabricated in Polycrystalline-Silicon Film," IEEE Electron Device Lett., Aug. 1980, pp. 159-161.

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