Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-02-07
1995-01-17
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257903, 257 66, 257336, 257369, 257351, 257338, 365181, H01L 2978
Patent
active
053828070
ABSTRACT:
A structure of a thin film transistor capable of reducing the power consumption in the waiting state and stabilizing the data holding characteristic in application of the thin film transistor as a load transistor in a memory cell in a CMOS-type SRAM is provided. A gate electrode is formed of a polycrystalline silicon film on a substrate having an insulating property. A gate insulating film is formed on the gate electrode. A polycrystalline silicon film is formed on the gate electrode with the gate insulating film interposed therebetween. Source/drain regions including a region of low concentration and a region of high concentration are formed in one and another regions of the polycrystalline silicon film separated by the gate electrode. Thus, the thin film transistor is formed. The thin film transistor is applied to p-channel MOS transistors serving as load transistors in a memory cell of a CMOS-type SRAM. P-channel MOS transistors are connected to n-channel MOS transistors serving as driver transistors in the memory cell. The n-channel MOS transistors are formed in a p-type well region, and the p-channel MOS transistors are formed on an interlayer insulating film on the n-channel MOS transistors.
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"Effects of Lightly Doped Drain Structure with Optimum Ion Dose on p-Channel MOSFET's", IEEE Trans. on Electron Devices, by T. Kaga and Y. Sakai, vol. 35 No. 12, 1988, pp. 2384-2389.
"A 25 .mu.m.sub.2 New Poly-Si PMOS Load (PPL) SRAM Cell Having Excellent Soft Error Immunity", IEDM, 1988, by T. Yamahaka, et al, pp. 48-51.
Ashida Motoi
Inoue Yasuo
Tsutsumi Kazuhito
Guay John F.
Jackson Jerome
Mitsubishi Denki & Kabushiki Kaisha
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