Field effect semiconductor devices and method of making same

Details Field effect semiconductor devices and method of making same Field effect semiconductor devices and method of making same

1983-09-22

1985-08-20

Edlow, Martin H.

357 233, 357 2311, 357 90, 357 49, 357 239, 357 55, 357 50, 357 56, H01L 2978

Patent

active

045367825

ABSTRACT:
A transistor is formed about a recess in the planar surface of a substrate of silicon. A pair of insulating spacers is provided in the recess, each abutting a respective side of the recess. Gate oxide is formed in the recess between the insulating spacers. A gate electrode is provided having one base overlying the gate oxide and the other base substantially coplanar with the planar surface. A source region extends from one side of the channel underlying the gate oxide to the planar surface. A drain region extends from the other side of the channel underlying the gate oxide to the planar surface.

REFERENCES:
patent: 3832248 (1974-08-01), Bazin et al.
patent: 4108686 (1978-08-01), Jacobus, Jr.
patent: 4186408 (1980-01-01), Esch et al.
patent: 4212100 (1980-07-01), Paivinen et al.
patent: 4243997 (1981-01-01), Natori et al.
patent: 4282647 (1981-08-01), Richman
patent: 4324038 (1982-04-01), Chang et al.

Affiliated with

Also associated with

Rating

Field effect semiconductor devices and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect semiconductor devices and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect semiconductor devices and method of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-563681