Field-effect semiconductor device with increased breakdown volta

Details Field-effect semiconductor device with increased breakdown volta Field-effect semiconductor device with increased breakdown volta

1994-10-18

1996-09-24

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257136, 257140, 257145, 257148, 257153, H01L 2974, H01L 31111

Patent

active

055593461

ABSTRACT:
A field-effect semiconductor device for reducing on-state source-drain voltage and increasing breakdown voltage, has a one conductivity type semiconductor region, a source region of one conductivity type, a drain region, and gate regions of other conductivity type. The source region, the drain region and the gate regions are formed in the semiconductor region and contiguous to a surface of the semiconductor region. The gate regions are located so as to sandwich a portion of the semiconductor region coupling the source region and the drain region.

REFERENCES:
patent: Re29971 (1979-04-01), Nishizawa et al.
patent: 3828230 (1974-08-01), Nishizawa et al.
patent: 4132996 (1979-01-01), Baliga
patent: 4337473 (1982-06-01), Nishizawa
patent: 4779125 (1988-10-01), Remmerie et al.
patent: 4811075 (1989-03-01), Eklund
patent: 5124773 (1992-06-01), Nakagawa et al.

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