Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1991-11-01
1993-12-21
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257192, 257347, 257410, 257411, H01L 2904, H01L 31072, H01L 2701, H01L 2976
Patent
active
052723615
ABSTRACT:
An improved field effect semiconductor device comprises source, drain and channel semiconductor regions and a gate electrode formed on the channel region through a gate insulating film. An intervening film is interposed between the channel region and the gate insulating film in order not to form a channel just below the gate insulating film. The intervening film is made, for example, from an amorphous silicon semiconductor whose energy gap is wider than that of the channel region made of polysilicon. By this structure, immunity to hot carrier effects can be given to the device.
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Hille Rolf
Loke Steven
Semiconductor Energy Laboratory Co,. Ltd.
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